Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan Hsi Liu; Hung Wen Hsu; Hung Wen Chen; Pi Chun Juan; Mu Chun Wang; Chin Po Cheng; Heng Sheng Huang

doi:10.1016/j.mee.2011.04.009

Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO₂ stacked gate dielectrics

Chuan Hsi Liu^*, Hung Wen Hsu, Hung Wen Chen, Pi Chun Juan, Mu Chun Wang, Chin Po Cheng, Heng Sheng Huang

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

La-incorporated HfO₂ could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO₂/HfLaO/p-Si and HfLaO/HfO ₂/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (V_g) for 10-year TDDB lifetime under 85 °C operation is V_g = 2.03 V, or equivalently 6.1 MV/cm.

Original language	English
Pages (from-to)	15-18
Number of pages	4
Journal	Microelectronic Engineering
Volume	89
Issue number	1
DOIs	https://doi.org/10.1016/j.mee.2011.04.009
Publication status	Published - 2012 Jan

Keywords

High-k dielectric
La-incorporated HfO
TDDB reliability

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

Access to Document

10.1016/j.mee.2011.04.009

Cite this

@article{efad94373cb24326bcad4020acc27004,

title = "Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics",

abstract = "La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.",

keywords = "High-k dielectric, La-incorporated HfO, TDDB reliability",

author = "Liu, {Chuan Hsi} and Hsu, {Hung Wen} and Chen, {Hung Wen} and Juan, {Pi Chun} and Wang, {Mu Chun} and Cheng, {Chin Po} and Huang, {Heng Sheng}",

year = "2012",

month = jan,

doi = "10.1016/j.mee.2011.04.009",

language = "English",

volume = "89",

pages = "15--18",

journal = "Microelectronic Engineering",

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T1 - Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

AU - Liu, Chuan Hsi

AU - Hsu, Hung Wen

AU - Chen, Hung Wen

AU - Juan, Pi Chun

AU - Wang, Mu Chun

AU - Cheng, Chin Po

AU - Huang, Heng Sheng

PY - 2012/1

Y1 - 2012/1

N2 - La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.

AB - La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.

KW - High-k dielectric

KW - La-incorporated HfO

KW - TDDB reliability

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