Reliability characteristics of metal-oxide-semiconductor capacitors with 0.72 nm equivalent-oxide-thickness LaO/HfO2 stacked gate dielectrics

Chuan-Hsi Liu, Hung Wen Hsu, Hung Wen Chen, Pi Chun Juan, Mu Chun Wang, Chin-Pao Cheng, Heng Sheng Huang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

La-incorporated HfO2 could improve the thermal stability and interface trap quality. Laminated structures with different doping positions and thicknesses were fabricated by RF magnetron co-sputtering method. The physical and electrical properties of HfO2/HfLaO/p-Si and HfLaO/HfO 2/p-Si structures after 850 °C postannealing were analyzed. And the time dependent dielectric breakdown (TDDB) characteristics were also analyzed for metal-oxide-semiconductor (MOS) capacitors with atomic-layer-deposited (ALD) HfLaO gate dielectrics. For TDDB characteristics, the Weibull slopes were independent of stress voltages and capacitor areas, but they were dependent on the stress temperatures. The electric-field acceleration parameter (γ) is about 4.3-4.5 MV/cm. The maximum voltage (Vg) for 10-year TDDB lifetime under 85 °C operation is Vg = 2.03 V, or equivalently 6.1 MV/cm.

Original languageEnglish
Pages (from-to)15-18
Number of pages4
JournalMicroelectronic Engineering
Volume89
Issue number1
DOIs
Publication statusPublished - 2012 Jan 1

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Keywords

  • High-k dielectric
  • La-incorporated HfO
  • TDDB reliability

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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