Reentrant effect on the transport properties of la0.7Sr 0.3MnO3 films

S. Y. Yang; W. L. Kuang; Yung Liou; W. S. Tse; S. F. Lee; Y. D. Yao

doi:10.1143/JJAP.45.5754

Reentrant effect on the transport properties of la_0.7Sr _0.3MnO₃ films

S. Y. Yang^*, W. L. Kuang, Yung Liou, W. S. Tse, S. F. Lee, Y. D. Yao

^*Corresponding author for this work

Undergraduate Program of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

In this work, the transport properties of polycrystalline manganite La _0.7Sr_0.3MnO₃ (LSMO) films were investigated. The LSMO was grown on MgO(001) and SiO₂/Si(001) substrates by using a magnetron dc sputtering technique to obtain polycrystalline films. It was found that the variation in the resistance with the temperature was dominated by the spin fluctuation around the magnetic domain walls. In addition, the reentrant spin glass gave rise to the upturn resistance of the polycrystalline LSMO films at low temperatures. The spin fluctuation and the reentrant effect also led to the significant magnetoresistance occurring in the LSMO films, which is larger than the colossal magnetoresistance of the LSMO film by one order of magnitude.

Original language	English
Pages (from-to)	5754-5756
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.45.5754
Publication status	Published - 2006 Jul 7

Keywords

Grain boundary
Magnetoresistance
Manganite
Polycrystalline
Reentrant effect
Thin film

ASJC Scopus subject areas

General Engineering
General Physics and Astronomy

Access to Document

10.1143/JJAP.45.5754

Cite this

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title = "Reentrant effect on the transport properties of la0.7Sr 0.3MnO3 films",

abstract = "In this work, the transport properties of polycrystalline manganite La 0.7Sr0.3MnO3 (LSMO) films were investigated. The LSMO was grown on MgO(001) and SiO2/Si(001) substrates by using a magnetron dc sputtering technique to obtain polycrystalline films. It was found that the variation in the resistance with the temperature was dominated by the spin fluctuation around the magnetic domain walls. In addition, the reentrant spin glass gave rise to the upturn resistance of the polycrystalline LSMO films at low temperatures. The spin fluctuation and the reentrant effect also led to the significant magnetoresistance occurring in the LSMO films, which is larger than the colossal magnetoresistance of the LSMO film by one order of magnitude.",

keywords = "Grain boundary, Magnetoresistance, Manganite, Polycrystalline, Reentrant effect, Thin film",

author = "Yang, {S. Y.} and Kuang, {W. L.} and Yung Liou and Tse, {W. S.} and Lee, {S. F.} and Yao, {Y. D.}",

year = "2006",

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T1 - Reentrant effect on the transport properties of la0.7Sr 0.3MnO3 films

AU - Yang, S. Y.

AU - Kuang, W. L.

AU - Liou, Yung

AU - Tse, W. S.

AU - Lee, S. F.

AU - Yao, Y. D.

PY - 2006/7/7

Y1 - 2006/7/7

N2 - In this work, the transport properties of polycrystalline manganite La 0.7Sr0.3MnO3 (LSMO) films were investigated. The LSMO was grown on MgO(001) and SiO2/Si(001) substrates by using a magnetron dc sputtering technique to obtain polycrystalline films. It was found that the variation in the resistance with the temperature was dominated by the spin fluctuation around the magnetic domain walls. In addition, the reentrant spin glass gave rise to the upturn resistance of the polycrystalline LSMO films at low temperatures. The spin fluctuation and the reentrant effect also led to the significant magnetoresistance occurring in the LSMO films, which is larger than the colossal magnetoresistance of the LSMO film by one order of magnitude.

AB - In this work, the transport properties of polycrystalline manganite La 0.7Sr0.3MnO3 (LSMO) films were investigated. The LSMO was grown on MgO(001) and SiO2/Si(001) substrates by using a magnetron dc sputtering technique to obtain polycrystalline films. It was found that the variation in the resistance with the temperature was dominated by the spin fluctuation around the magnetic domain walls. In addition, the reentrant spin glass gave rise to the upturn resistance of the polycrystalline LSMO films at low temperatures. The spin fluctuation and the reentrant effect also led to the significant magnetoresistance occurring in the LSMO films, which is larger than the colossal magnetoresistance of the LSMO film by one order of magnitude.

KW - Grain boundary

KW - Magnetoresistance

KW - Manganite

KW - Polycrystalline

KW - Reentrant effect

KW - Thin film

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