Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Ya Ju Lee; Chih Hao Chen; Chia Jung Lee

doi:10.1109/LPT.2010.2065221

Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Ya Ju Lee^*, Chih Hao Chen, Chia Jung Lee

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Article › peer-review

51 Citations (Scopus)

Abstract

The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

Original language	English
Article number	5546907
Pages (from-to)	1506-1508
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	22
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2010.2065221
Publication status	Published - 2010

Keywords

Efficiency droop
InGaN
light-emitting diode (LED)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/LPT.2010.2065221

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title = "Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells",

abstract = "The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.",

keywords = "Efficiency droop, InGaN, light-emitting diode (LED)",

author = "Lee, {Ya Ju} and Chen, {Chih Hao} and Lee, {Chia Jung}",

note = "Funding Information: Manuscript received July 02, 2010; revised July 26, 2010; accepted August 01, 2010. Date of publication August 12, 2010; date of current version September 24, 2010. The authors gratefully acknowledge the financial support from the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC-98-2112-M003-001-MY2.",

year = "2010",

doi = "10.1109/LPT.2010.2065221",

language = "English",

volume = "22",

pages = "1506--1508",

journal = "IEEE Photonics Technology Letters",

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AU - Lee, Ya Ju

AU - Chen, Chih Hao

AU - Lee, Chia Jung

N1 - Funding Information: Manuscript received July 02, 2010; revised July 26, 2010; accepted August 01, 2010. Date of publication August 12, 2010; date of current version September 24, 2010. The authors gratefully acknowledge the financial support from the National Science Council of Republic of China (R.O.C.) in Taiwan under Contract NSC-98-2112-M003-001-MY2.

PY - 2010

Y1 - 2010

N2 - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

AB - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

KW - Efficiency droop

KW - InGaN

KW - light-emitting diode (LED)

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Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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