Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

Ya-Ju Lee, Chih Hao Chen, Chia Jung Lee

    Research output: Contribution to journalArticle

    38 Citations (Scopus)

    Abstract

    The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

    Original languageEnglish
    Article number5546907
    Pages (from-to)1506-1508
    Number of pages3
    JournalIEEE Photonics Technology Letters
    Volume22
    Issue number20
    DOIs
    Publication statusPublished - 2010 Oct 11

    Fingerprint

    Semiconductor quantum wells
    Light emitting diodes
    Gallium nitride
    Indium
    light emitting diodes
    quantum wells
    gallium nitrides
    indium
    Electrons
    Wave functions
    Valence bands
    Quantum efficiency
    radiative recombination
    quantum efficiency
    leakage
    electrons
    retarding
    wave functions
    valence
    gallium nitride

    Keywords

    • Efficiency droop
    • InGaN
    • light-emitting diode (LED)

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Atomic and Molecular Physics, and Optics
    • Electronic, Optical and Magnetic Materials

    Cite this

    Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells. / Lee, Ya-Ju; Chen, Chih Hao; Lee, Chia Jung.

    In: IEEE Photonics Technology Letters, Vol. 22, No. 20, 5546907, 11.10.2010, p. 1506-1508.

    Research output: Contribution to journalArticle

    @article{d72ce11e39ec4566b1f1a3e350455f20,
    title = "Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells",
    abstract = "The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5{\%} at I=20 mA and 55.7{\%} at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.",
    keywords = "Efficiency droop, InGaN, light-emitting diode (LED)",
    author = "Ya-Ju Lee and Chen, {Chih Hao} and Lee, {Chia Jung}",
    year = "2010",
    month = "10",
    day = "11",
    doi = "10.1109/LPT.2010.2065221",
    language = "English",
    volume = "22",
    pages = "1506--1508",
    journal = "IEEE Photonics Technology Letters",
    issn = "1041-1135",
    publisher = "Institute of Electrical and Electronics Engineers Inc.",
    number = "20",

    }

    TY - JOUR

    T1 - Reduction in the efficiency-droop effect of ingan green light-emitting diodes using gradual quantum wells

    AU - Lee, Ya-Ju

    AU - Chen, Chih Hao

    AU - Lee, Chia Jung

    PY - 2010/10/11

    Y1 - 2010/10/11

    N2 - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

    AB - The effect of gradual indium gallium nitride (InGaN) quantum wells (QWs) on the suppression of efficiency-droop in green light-emitting diodes (LEDs) is numerically investigated. The presented scheme increases the internal quantum efficiency by 45.5% at I=20 mA and 55.7% at I=100 mA, indicating a considerable reduction of efficiency-droop. This improvement is attributable mainly to the use of the gradual InGaN QW's structure that significantly alleviates band bending in the valence band, improving the transport efficiency of injected holes above that of conventional LEDs. The radiative recombination is thus enhanced as the overlap between electron and hole wave functions is increased. Most importantly, the leakage of injected electrons to p-type region is correspondingly reduced, in turn suppressing the efficiency-droop in the LED.

    KW - Efficiency droop

    KW - InGaN

    KW - light-emitting diode (LED)

    UR - http://www.scopus.com/inward/record.url?scp=77957604749&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77957604749&partnerID=8YFLogxK

    U2 - 10.1109/LPT.2010.2065221

    DO - 10.1109/LPT.2010.2065221

    M3 - Article

    AN - SCOPUS:77957604749

    VL - 22

    SP - 1506

    EP - 1508

    JO - IEEE Photonics Technology Letters

    JF - IEEE Photonics Technology Letters

    SN - 1041-1135

    IS - 20

    M1 - 5546907

    ER -