Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu Chiang Chao; Yi Cheng Lin; Min Zhi Dai; Hsiao Wen Zan; Hsin Fei Meng

doi:10.1063/1.3261749

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu Chiang Chao, Yi Cheng Lin, Min Zhi Dai, Hsiao Wen Zan^*, Hsin Fei Meng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 10⁴ is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

Original language	English
Article number	203305
Journal	Applied Physics Letters
Volume	95
Issue number	20
DOIs	https://doi.org/10.1063/1.3261749
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{5dc202ba5fc844d2a511e0fe80ecfe8f,

title = "Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio",

abstract = "Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.",

author = "Chao, {Yu Chiang} and Lin, {Yi Cheng} and Dai, {Min Zhi} and Zan, {Hsiao Wen} and Meng, {Hsin Fei}",

note = "Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC97-2628-M-009-016.",

year = "2009",

doi = "10.1063/1.3261749",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "20",

}

TY - JOUR

T1 - Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

AU - Chao, Yu Chiang

AU - Lin, Yi Cheng

AU - Dai, Min Zhi

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

N1 - Funding Information: This work is supported by the National Science Council of Taiwan under Contract No. NSC97-2628-M-009-016.

PY - 2009

Y1 - 2009

N2 - Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

AB - Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

UR - http://www.scopus.com/inward/record.url?scp=70450245374&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=70450245374&partnerID=8YFLogxK

U2 - 10.1063/1.3261749

DO - 10.1063/1.3261749

M3 - Article

AN - SCOPUS:70450245374

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203305

ER -

Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Abstract

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