Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio

Yu Chiang Chao, Yi Cheng Lin, Min Zhi Dai, Hsiao Wen Zan, Hsin Fei Meng

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Abstract

Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasma treated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as 104 is obtained at a collector to emitter voltage as low as -0.84 V. The low operation voltage is crucial to the development of low-power large-area polymer transistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

Original languageEnglish
Article number203305
JournalApplied Physics Letters
Volume95
Issue number20
DOIs
Publication statusPublished - 2009 Nov 30

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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