Realization of ultrafast and high-quality anodic bonding using a non-contact scanning electrode

Jim Wei Wu, Chii-Rong Yang, Mao Jung Huang, Cheng Hao Yang, Che Yi Huang

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The anodic bonding technique, which is primarily used in glass to silicon wafer bonding, has been extensively used in microelectromechanical systems (MEMS) for the packaging of microsensors and microactuators. When the bonding voltage is applied, the bonded region instantly occurs at the contact point of the cathode with the glass. The geometric shape or arranged pattern of the cathode electrode significantly affects the bonding quality, particularly the gas-trapping at the bonded interface and the bonding time. This paper presents a novel anodic bonding process, in which the non-contacting and rotating electrode with radial lines is used as the cathode for scan bonding with arc-discharge assistance. The experimental results show that a bonding ratio of 99.98% and an average bonding strength of 15.45 MPa for a 4-inch silicon/glass bonded pair can be achieved in a 17 s bonding time by using a cathode electrode with eight 45 included-angle radial lines at a rotation speed of 0.45 rpm, a non-contact gap of 120 μm, a bonding voltage of 900 V and a bonding temperature of 400 °C. This ultrafast and high-quality anodic bonding has been synchronously realized under this scan bonding technique.

Original languageEnglish
Article number075008
JournalJournal of Micromechanics and Microengineering
Volume23
Issue number7
DOIs
Publication statusPublished - 2013 Jul 1

Fingerprint

Scanning
Electrodes
Cathodes
Glass
Microactuators
Wafer bonding
Microsensors
Point contacts
Electric potential
Silicon
Silicon wafers
MEMS
Packaging
Gases

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

Cite this

Realization of ultrafast and high-quality anodic bonding using a non-contact scanning electrode. / Wu, Jim Wei; Yang, Chii-Rong; Huang, Mao Jung; Yang, Cheng Hao; Huang, Che Yi.

In: Journal of Micromechanics and Microengineering, Vol. 23, No. 7, 075008, 01.07.2013.

Research output: Contribution to journalArticle

@article{4a84454a46244024ae3a55841d9ddd4c,
title = "Realization of ultrafast and high-quality anodic bonding using a non-contact scanning electrode",
abstract = "The anodic bonding technique, which is primarily used in glass to silicon wafer bonding, has been extensively used in microelectromechanical systems (MEMS) for the packaging of microsensors and microactuators. When the bonding voltage is applied, the bonded region instantly occurs at the contact point of the cathode with the glass. The geometric shape or arranged pattern of the cathode electrode significantly affects the bonding quality, particularly the gas-trapping at the bonded interface and the bonding time. This paper presents a novel anodic bonding process, in which the non-contacting and rotating electrode with radial lines is used as the cathode for scan bonding with arc-discharge assistance. The experimental results show that a bonding ratio of 99.98{\%} and an average bonding strength of 15.45 MPa for a 4-inch silicon/glass bonded pair can be achieved in a 17 s bonding time by using a cathode electrode with eight 45 included-angle radial lines at a rotation speed of 0.45 rpm, a non-contact gap of 120 μm, a bonding voltage of 900 V and a bonding temperature of 400 °C. This ultrafast and high-quality anodic bonding has been synchronously realized under this scan bonding technique.",
author = "Wu, {Jim Wei} and Chii-Rong Yang and Huang, {Mao Jung} and Yang, {Cheng Hao} and Huang, {Che Yi}",
year = "2013",
month = "7",
day = "1",
doi = "10.1088/0960-1317/23/7/075008",
language = "English",
volume = "23",
journal = "Journal of Micromechanics and Microengineering",
issn = "0960-1317",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Realization of ultrafast and high-quality anodic bonding using a non-contact scanning electrode

AU - Wu, Jim Wei

AU - Yang, Chii-Rong

AU - Huang, Mao Jung

AU - Yang, Cheng Hao

AU - Huang, Che Yi

PY - 2013/7/1

Y1 - 2013/7/1

N2 - The anodic bonding technique, which is primarily used in glass to silicon wafer bonding, has been extensively used in microelectromechanical systems (MEMS) for the packaging of microsensors and microactuators. When the bonding voltage is applied, the bonded region instantly occurs at the contact point of the cathode with the glass. The geometric shape or arranged pattern of the cathode electrode significantly affects the bonding quality, particularly the gas-trapping at the bonded interface and the bonding time. This paper presents a novel anodic bonding process, in which the non-contacting and rotating electrode with radial lines is used as the cathode for scan bonding with arc-discharge assistance. The experimental results show that a bonding ratio of 99.98% and an average bonding strength of 15.45 MPa for a 4-inch silicon/glass bonded pair can be achieved in a 17 s bonding time by using a cathode electrode with eight 45 included-angle radial lines at a rotation speed of 0.45 rpm, a non-contact gap of 120 μm, a bonding voltage of 900 V and a bonding temperature of 400 °C. This ultrafast and high-quality anodic bonding has been synchronously realized under this scan bonding technique.

AB - The anodic bonding technique, which is primarily used in glass to silicon wafer bonding, has been extensively used in microelectromechanical systems (MEMS) for the packaging of microsensors and microactuators. When the bonding voltage is applied, the bonded region instantly occurs at the contact point of the cathode with the glass. The geometric shape or arranged pattern of the cathode electrode significantly affects the bonding quality, particularly the gas-trapping at the bonded interface and the bonding time. This paper presents a novel anodic bonding process, in which the non-contacting and rotating electrode with radial lines is used as the cathode for scan bonding with arc-discharge assistance. The experimental results show that a bonding ratio of 99.98% and an average bonding strength of 15.45 MPa for a 4-inch silicon/glass bonded pair can be achieved in a 17 s bonding time by using a cathode electrode with eight 45 included-angle radial lines at a rotation speed of 0.45 rpm, a non-contact gap of 120 μm, a bonding voltage of 900 V and a bonding temperature of 400 °C. This ultrafast and high-quality anodic bonding has been synchronously realized under this scan bonding technique.

UR - http://www.scopus.com/inward/record.url?scp=84879767884&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879767884&partnerID=8YFLogxK

U2 - 10.1088/0960-1317/23/7/075008

DO - 10.1088/0960-1317/23/7/075008

M3 - Article

AN - SCOPUS:84879767884

VL - 23

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

SN - 0960-1317

IS - 7

M1 - 075008

ER -