Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

T. S. Lay; Y. Y. Liao; W. D. Liu; Y. H. Lai; W. H. Hung; J. Kwo; M. Hong; J. P. Mannaerts

doi:10.1016/S0038-1101(02)00467-7

Rapid post-metallization annealing effects on high-k Y₂O₃/Si capacitor

T. S. Lay^*
, Y. Y. Liao
, W. D. Liu
, Y. H. Lai
, W. H. Hung
, J. Kwo
, M. Hong
, J. P. Mannaerts

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The rapid thermal annealing effects on thin Pt/Y₂O₃/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y₂O₃/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 10¹⁰ cm^-2 and a minimum interface state density ∼3.6 × 10¹⁰ cm^-2eV^-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y₂O₃ layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.

Original language	English
Pages (from-to)	1021-1025
Number of pages	5
Journal	Solid-State Electronics
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/S0038-1101(02)00467-7
Publication status	Published - 2003 Jun
Externally published	Yes

Keywords

Post-metallization annealing
Si
XPS
YO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0038-1101(02)00467-7

Cite this

@article{443a3d19847c45f59633d9370eaf324c,

title = "Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor",

abstract = "The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.",

keywords = "Post-metallization annealing, Si, XPS, YO",

author = "Lay, \{T. S.\} and Liao, \{Y. Y.\} and Liu, \{W. D.\} and Lai, \{Y. H.\} and Hung, \{W. H.\} and J. Kwo and M. Hong and Mannaerts, \{J. P.\}",

note = "Funding Information: One of the authors (TSL) would like to thank the supports from the National Science Council of Taiwan through funding grants NSC-91-2215-E-110-022, and the Synchrotron Radiation Research Center, Hsinchu, Taiwan.",

year = "2003",

month = jun,

doi = "10.1016/S0038-1101(02)00467-7",

language = "English",

volume = "47",

pages = "1021--1025",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "6",

}

TY - JOUR

T1 - Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

AU - Lay, T. S.

AU - Liao, Y. Y.

AU - Liu, W. D.

AU - Lai, Y. H.

AU - Hung, W. H.

AU - Kwo, J.

AU - Hong, M.

AU - Mannaerts, J. P.

N1 - Funding Information: One of the authors (TSL) would like to thank the supports from the National Science Council of Taiwan through funding grants NSC-91-2215-E-110-022, and the Synchrotron Radiation Research Center, Hsinchu, Taiwan.

PY - 2003/6

Y1 - 2003/6

N2 - The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.

AB - The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.

KW - Post-metallization annealing

KW - Si

KW - XPS

KW - YO

UR - https://www.scopus.com/pages/publications/0037409003

UR - https://www.scopus.com/pages/publications/0037409003#tab=citedBy

U2 - 10.1016/S0038-1101(02)00467-7

DO - 10.1016/S0038-1101(02)00467-7

M3 - Article

AN - SCOPUS:0037409003

SN - 0038-1101

VL - 47

SP - 1021

EP - 1025

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 6

ER -