Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

T. S. Lay, Y. Y. Liao, W. D. Liu, Y. H. Lai, Wei-Hsiu Hung, J. Kwo, M. Hong, J. P. Mannaerts

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.

Original languageEnglish
Pages (from-to)1021-1025
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1

Fingerprint

Metallizing
capacitors
Capacitors
Annealing
annealing
MOS capacitors
Silicates
Depth profiling
Rapid thermal annealing
Interface states
Photoelectrons
Charge density
Oxides
silicates
photoelectrons
Capacitance
Stabilization
stabilization
capacitance
X rays

Keywords

  • Post-metallization annealing
  • Si
  • XPS
  • YO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lay, T. S., Liao, Y. Y., Liu, W. D., Lai, Y. H., Hung, W-H., Kwo, J., ... Mannaerts, J. P. (2003). Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor. Solid-State Electronics, 47(6), 1021-1025. https://doi.org/10.1016/S0038-1101(02)00467-7

Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor. / Lay, T. S.; Liao, Y. Y.; Liu, W. D.; Lai, Y. H.; Hung, Wei-Hsiu; Kwo, J.; Hong, M.; Mannaerts, J. P.

In: Solid-State Electronics, Vol. 47, No. 6, 01.06.2003, p. 1021-1025.

Research output: Contribution to journalArticle

Lay, TS, Liao, YY, Liu, WD, Lai, YH, Hung, W-H, Kwo, J, Hong, M & Mannaerts, JP 2003, 'Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor', Solid-State Electronics, vol. 47, no. 6, pp. 1021-1025. https://doi.org/10.1016/S0038-1101(02)00467-7
Lay, T. S. ; Liao, Y. Y. ; Liu, W. D. ; Lai, Y. H. ; Hung, Wei-Hsiu ; Kwo, J. ; Hong, M. ; Mannaerts, J. P. / Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor. In: Solid-State Electronics. 2003 ; Vol. 47, No. 6. pp. 1021-1025.
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