Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor

T. S. Lay, Y. Y. Liao, W. D. Liu, Y. H. Lai, W. H. Hung, J. Kwo, M. Hong, J. P. Mannaerts

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Abstract

The rapid thermal annealing effects on thin Pt/Y2O3/Si MOS capacitors have been investigated. After post-metallization annealing at 425 °C in 30 s, the Pt/Y2O3/Si capacitor shows a sharp capacitance-voltage swing of a low oxide charge density ∼7.7 × 1010 cm-2 and a minimum interface state density ∼3.6 × 1010 cm-2eV-1. The depth-profiling X-ray photoelectron spectra show the annihilation of O-H bonding, and stabilization of Y-O bonding in the Y2O3 layer by thermal annealing. However, at the interface, a transition silicate layer of Si-Y-O-H bonding is persistent.

Original languageEnglish
Pages (from-to)1021-1025
Number of pages5
JournalSolid-State Electronics
Volume47
Issue number6
DOIs
Publication statusPublished - 2003 Jun 1

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Keywords

  • Post-metallization annealing
  • Si
  • XPS
  • YO

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lay, T. S., Liao, Y. Y., Liu, W. D., Lai, Y. H., Hung, W. H., Kwo, J., Hong, M., & Mannaerts, J. P. (2003). Rapid post-metallization annealing effects on high-k Y2O3/Si capacitor. Solid-State Electronics, 47(6), 1021-1025. https://doi.org/10.1016/S0038-1101(02)00467-7