Random polarization distribution of multi-domain model for polycrystalline ferroelectric HfZrO2

K. T. Chen, C. Y. Liao, K. Y. Hsiang, S. H. Chang, F. J. Hsieh, H. Liang, S. H. Chiang, J. H. Liu, K. S. Li, S. T. Chang, M. H. Lee

Research output: Contribution to journalArticlepeer-review

Abstract

Device dimension scaling down to be comparable to the domain size of polycrystalline ferroelectric HfZrO2 (HZO) is evaluated for subthreshold swing (SS) and drain-induced barrier lowering (DIBL) by numerical simulation. The proposed multi-domain modeling involves polarization random location in HZO and probability with Gaussian distribution, as well as being integrated with the Landau-Khalatnikov equation. A small device with a few domains exhibits steep SS compared with large dimension with many domains. The N-DIBL (negative-DIBL) is also estimated by using this model, and the negative capacitance effect retards the short-channel effects significantly. The trend of the experimental data and simulation results of fin field-effect transistors and planar field-effect transistors is consistent with nano-scale and micro-scale devices, respectively.

Original languageEnglish
Article number125011
JournalSemiconductor Science and Technology
Volume35
Issue number12
DOIs
Publication statusPublished - 2020 Oct

Keywords

  • ferroelectric
  • HfZrO
  • multi-domain

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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