Raman study of Si-Ge intermixing in Ge quantum rings and dots

V. I. Mashanov, H. H. Cheng, Chi-Ta Chia, Y. H. Chang

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.

Original languageEnglish
Pages (from-to)531-536
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume28
Issue number4
DOIs
Publication statusPublished - 2005 Sep 1

Fingerprint

Strain relaxation
Semiconductor quantum dots
Atomic force microscopy
Nanostructures
quantum dots
atomic force microscopy
rings
Growth temperature
caps
Molecular beam epitaxy
molecular beam epitaxy
temperature
shift
spectroscopy
Temperature
energy
Optical spectroscopy

Keywords

  • Germanium
  • Quantum dots
  • Quantum rings
  • Raman scattering

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

Cite this

Raman study of Si-Ge intermixing in Ge quantum rings and dots. / Mashanov, V. I.; Cheng, H. H.; Chia, Chi-Ta; Chang, Y. H.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 28, No. 4, 01.09.2005, p. 531-536.

Research output: Contribution to journalArticle

Mashanov, V. I. ; Cheng, H. H. ; Chia, Chi-Ta ; Chang, Y. H. / Raman study of Si-Ge intermixing in Ge quantum rings and dots. In: Physica E: Low-Dimensional Systems and Nanostructures. 2005 ; Vol. 28, No. 4. pp. 531-536.
@article{bdfbb19b3bca4d4f84ce3b6da03a5766,
title = "Raman study of Si-Ge intermixing in Ge quantum rings and dots",
abstract = "The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44{\%} to 27{\%}, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.",
keywords = "Germanium, Quantum dots, Quantum rings, Raman scattering",
author = "Mashanov, {V. I.} and Cheng, {H. H.} and Chi-Ta Chia and Chang, {Y. H.}",
year = "2005",
month = "9",
day = "1",
doi = "10.1016/j.physe.2005.05.060",
language = "English",
volume = "28",
pages = "531--536",
journal = "Physica E: Low-Dimensional Systems and Nanostructures",
issn = "1386-9477",
publisher = "Elsevier",
number = "4",

}

TY - JOUR

T1 - Raman study of Si-Ge intermixing in Ge quantum rings and dots

AU - Mashanov, V. I.

AU - Cheng, H. H.

AU - Chia, Chi-Ta

AU - Chang, Y. H.

PY - 2005/9/1

Y1 - 2005/9/1

N2 - The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.

AB - The Ge/Si (1 0 0) nanostructures have been studied by atomic force microscopy (AFM) and Micro Raman optical spectroscopy. Two layers of Ge of total thickness 0.75 nm and Si cap with thickness 2.5 nm were deposited by the method of molecular beam epitaxy at the temperature range 640-700°C. AFM shows both quantum dots and ring-shape Ge nanostructures. From the analysis of the intensity and energy shift of the Raman signal we have found that the average concentration of Ge decreases considerably from 44% to 27%, when the growth temperature increases, whereas the degree of strain relaxation remains roughly the same. This allows us to conclude that intermixing is a dominating mechanism for strain relaxation in processes of transformation of Ge quantum dots to quantum rings.

KW - Germanium

KW - Quantum dots

KW - Quantum rings

KW - Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=24144475525&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24144475525&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2005.05.060

DO - 10.1016/j.physe.2005.05.060

M3 - Article

AN - SCOPUS:24144475525

VL - 28

SP - 531

EP - 536

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 4

ER -