Raman scattering study for self-organized Ge quantum dots formed on Si substrate

T. R. Yang*, M. M. Dvoynenko, Z. C. Feng, I. Ferguson, H. H. Cheng

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

Original languageEnglish
Pages (from-to)67-72
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: 2002 Dec 22002 Dec 5

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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