Raman scattering study for self-organized Ge quantum dots formed on Si substrate

T. R. Yang; M. M. Dvoynenko; Z. C. Feng; I. Ferguson; H. H. Cheng

doi:10.1557/proc-744-m2.11

Raman scattering study for self-organized Ge quantum dots formed on Si substrate

T. R. Yang^*, M. M. Dvoynenko, Z. C. Feng, I. Ferguson, H. H. Cheng

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

Original language	English
Pages (from-to)	67-72
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	744
DOIs	https://doi.org/10.1557/proc-744-m2.11
Publication status	Published - 2002
Event	Quantum Confined Semiconductor Nanostructures - Boston MA, United States Duration: 2002 Dec 2 → 2002 Dec 5

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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title = "Raman scattering study for self-organized Ge quantum dots formed on Si substrate",

abstract = "A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.",

author = "Yang, {T. R.} and Dvoynenko, {M. M.} and Feng, {Z. C.} and I. Ferguson and Cheng, {H. H.}",

year = "2002",

doi = "10.1557/proc-744-m2.11",

language = "English",

volume = "744",

pages = "67--72",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Quantum Confined Semiconductor Nanostructures ; Conference date: 02-12-2002 Through 05-12-2002",

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TY - JOUR

T1 - Raman scattering study for self-organized Ge quantum dots formed on Si substrate

AU - Yang, T. R.

AU - Dvoynenko, M. M.

AU - Feng, Z. C.

AU - Ferguson, I.

AU - Cheng, H. H.

PY - 2002

Y1 - 2002

N2 - A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

AB - A Raman scattering study for self-organized Ge dots on Si substrate is presented. Raman signals from the Ge islands and Si substrate have been separated, by means of difference Raman spectroscopy technique. The wetting layer thickness and strain were estimated from the line width and the position of the peak. The estimated wetting layer thickness values are comparative with the Ge dot height obtained from microscopy measurements. As explained, the strain is observed to decrease with an increase of the Ge island height and the wetting layer thickness.

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U2 - 10.1557/proc-744-m2.11

DO - 10.1557/proc-744-m2.11

M3 - Conference article

AN - SCOPUS:0038826573

SN - 0272-9172

VL - 744

SP - 67

EP - 72

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Quantum Confined Semiconductor Nanostructures

Y2 - 2 December 2002 through 5 December 2002

ER -

Raman scattering study for self-organized Ge quantum dots formed on Si substrate

Abstract

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