Radiation damage and surface modification of InSb(111) by MeV C+ and C2+ ions

G. Kuri*, T. R. Yang

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


The damage accumulation at the surface as well as deeper regions in InSb bombarded with MeV C+ and C2+ ions have been studied. Mirror polished (111)-oriented InSb single crystal substrates were implanted with 1.00 MeV C+ and 2.00 MeV C2+ ions to a total fluence of 5×1014 C-atoms/cm2 at room temperature. The retained damage following implantation was analyzed by Rutherford backscattering/channeling technique and Raman scattering experiment. Fourier Transform Infrared Spectroscopy (FTIR) have been used to study the dielectric behavior, optical as well as transport properties of the implanted specimens. The FTIR spectra were analyzed within the framework of a dielectric response model. The surface structure of the implanted wafers has been measured by atomic force microscopy. The results show that the response of InSb crystal to C+ ion bombardment is widely different when compared to that of C2+ implantation. A tentative explanation for the results have been presented.

Original languageEnglish
Pages (from-to)672-679
Number of pages8
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 2000
EventOptoelectronic Materials and Devices II - Taipei, Taiwan
Duration: 2000 Jul 262000 Jul 28

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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