Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang; I. Sheng Wang; I. Sheng Huang; Yun Chieh Yeh; Shao Sian Li; Kun Hua Tu; Chia Chun Chen; Chun Wei Chen

doi:10.1021/jp210062x

Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang, I. Sheng Wang, I. Sheng Huang, Yun Chieh Yeh, Shao Sian Li, Kun Hua Tu, Chia Chun Chen^*, Chun Wei Chen

^*Corresponding author for this work

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

Original language	English
Pages (from-to)	10181-10185
Number of pages	5
Journal	Journal of Physical Chemistry C
Volume	116
Issue number	18
DOIs	https://doi.org/10.1021/jp210062x
Publication status	Published - 2012 May 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
General Energy
Physical and Theoretical Chemistry
Surfaces, Coatings and Films

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10.1021/jp210062x

Cite this

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title = "Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer",

abstract = "In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.",

author = "Wang, {Di Yan} and Wang, {I. Sheng} and Huang, {I. Sheng} and Yeh, {Yun Chieh} and Li, {Shao Sian} and Tu, {Kun Hua} and Chen, {Chia Chun} and Chen, {Chun Wei}",

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doi = "10.1021/jp210062x",

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journal = "Journal of Physical Chemistry C",

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T1 - Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

AU - Wang, Di Yan

AU - Wang, I. Sheng

AU - Huang, I. Sheng

AU - Yeh, Yun Chieh

AU - Li, Shao Sian

AU - Tu, Kun Hua

AU - Chen, Chia Chun

AU - Chen, Chun Wei

PY - 2012/5/10

Y1 - 2012/5/10

N2 - In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

AB - In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

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JO - Journal of Physical Chemistry C

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Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Abstract

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