Quantum dot light-emitting diode using solution-processable graphene oxide as the anode interfacial layer

Di Yan Wang, I. Sheng Wang, I. Sheng Huang, Yun Chieh Yeh, Shao Sian Li, Kun Hua Tu, Chia Chun Chen*, Chun Wei Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)

Abstract

In this article, the solution processable graphene oxide (GO) thin film was utilized as the anode interfacial layer in quantum dot light emitting diodes (QD-LEDs). The QD-LED devices (ITO/GO/QDs/TPBi/LiF/Al) were fabricated by employing a layer-by-layer assembled deposition technique with the electrostatic interaction between GO and QDs. The thicknesses of GO thin films and the layer number of CdSe/ZnS QD emissive layers were carefully controlled by spin-casting processes. The GO thin films, which act as the electron blocking and hole transporting layer in the QD-LED devices, have demonstrated the advantage of being compatible with fully solution-processed fabrications of large-area printable optoelectronic devices.

Original languageEnglish
Pages (from-to)10181-10185
Number of pages5
JournalJournal of Physical Chemistry C
Volume116
Issue number18
DOIs
Publication statusPublished - 2012 May 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Energy(all)
  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films

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