We study the disorder dependence of the phase coherence time of quasi-one-dimensional wires and two-dimensional (2D) Hall bars fabricated from a high mobility GaAs/AlGaAs heterostructure. Using an original ion implantation technique, we can tune the intrinsic disorder felt by the 2D electron gas and continuously vary the system from the semiballistic regime to the localized one. In the diffusive regime, the phase coherence time follows a power law as a function of diffusion coefficient as expected in the Fermi-liquid theory, without any sign of low-temperature saturation. Surprisingly, in the semiballistic regime, it becomes independent of the diffusion coefficient. In the strongly localized regime we find a diverging phase coherence time with decreasing temperature, however, with a smaller exponent compared to the weakly localized regime.
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|Publication status||Published - 2010 Jun 8|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics