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Punch-through and junction breakdown characteristics for uniaxial strained nano-node metal-oxide-semiconductor field-effect transistors on (100) wafers

  • Mu Chun Wang
  • , Heng Sheng Huang
  • , Min Ru Peng
  • , Shea Jue Wang
  • , Tsao Yeh Chen*
  • , Wen Shiang Liao
  • , Hsin Chia Yang
  • , Chuan Hsi Liu
  • *Corresponding author for this work

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