Proximity effect of electron beam lithography for single-electron transistor fabrication

Shu Fen Hu; Chin Lung Sung; Kuo Dong Huang; Yue Min Wan

doi:10.1063/1.1811803

Proximity effect of electron beam lithography for single-electron transistor fabrication

Shu Fen Hu^*, Chin Lung Sung, Kuo Dong Huang, Yue Min Wan

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (I_d) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the I_d oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.

Original language	English
Pages (from-to)	3893-3895
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1063/1.1811803
Publication status	Published - 2004 Oct 25
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1811803

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@article{9cf559353ec84f35b3a71950b65740c6,

title = "Proximity effect of electron beam lithography for single-electron transistor fabrication",

abstract = "In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.",

author = "Hu, {Shu Fen} and Sung, {Chin Lung} and Huang, {Kuo Dong} and Wan, {Yue Min}",

note = "Funding Information: The authors would like to thank the National Science Council of the Republic of China (Contract Nos. NSC91-2112-M-214-001 and NSC-92-2215-E-492-008) and the National Nano Device Laboratories (NDL) (Contract No. NDL-92S-C-013) for financially supporting this research. Professor Y. C. Chou and Y P. Fang are also appreciated for their assistance in the electrical measurement.",

year = "2004",

month = oct,

day = "25",

doi = "10.1063/1.1811803",

language = "English",

volume = "85",

pages = "3893--3895",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "17",

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T1 - Proximity effect of electron beam lithography for single-electron transistor fabrication

AU - Hu, Shu Fen

AU - Sung, Chin Lung

AU - Huang, Kuo Dong

AU - Wan, Yue Min

N1 - Funding Information: The authors would like to thank the National Science Council of the Republic of China (Contract Nos. NSC91-2112-M-214-001 and NSC-92-2215-E-492-008) and the National Nano Device Laboratories (NDL) (Contract No. NDL-92S-C-013) for financially supporting this research. Professor Y. C. Chou and Y P. Fang are also appreciated for their assistance in the electrical measurement.

PY - 2004/10/25

Y1 - 2004/10/25

N2 - In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.

AB - In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.

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DO - 10.1063/1.1811803

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VL - 85

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EP - 3895

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

ER -

Proximity effect of electron beam lithography for single-electron transistor fabrication

Abstract

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