Proximity effect of electron beam lithography for single-electron transistor fabrication

Shu Fen Hu, Chin Lung Sung, Kuo Dong Huang, Yue Min Wan

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this letter, we shall describe a method, utilizing the proximity effect in electron beam lithography, suitable for fabricating silicon dots and devices, and demonstrate the electronic characteristics of the Si single-electron transistor. The drain current (Id) of the device oscillates against gate voltage. The electrical characteristics of the single-electron transistor were observed to be consistent with the expected behavior of electron transport through gated quantum dots, at up to 150 K. The dependence of the electrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoelectronic systems.

Original languageEnglish
Pages (from-to)3893-3895
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number17
DOIs
Publication statusPublished - 2004 Oct 25

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single electron transistors
lithography
electron beams
fabrication
CMOS
manufacturing
quantum dots
oscillations
electric potential
silicon
electronics
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Proximity effect of electron beam lithography for single-electron transistor fabrication. / Hu, Shu Fen; Sung, Chin Lung; Huang, Kuo Dong; Wan, Yue Min.

In: Applied Physics Letters, Vol. 85, No. 17, 25.10.2004, p. 3893-3895.

Research output: Contribution to journalArticle

Hu, Shu Fen ; Sung, Chin Lung ; Huang, Kuo Dong ; Wan, Yue Min. / Proximity effect of electron beam lithography for single-electron transistor fabrication. In: Applied Physics Letters. 2004 ; Vol. 85, No. 17. pp. 3893-3895.
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