Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies

Min-Hung Lee, P. G. Chen, C. Liu, K. Y. Chu, C. C. Cheng, M. J. Xie, S. N. Liu, J. W. Lee, S. J. Huang, M. H. Liao, M. Tang, K. S. Li, M. C. Chen

Research output: Chapter in Book/Report/Conference proceedingConference contribution

42 Citations (Scopus)

Abstract

Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window V T (threshold voltage) shift < 0.1V, SS for = 42mV/dec, SS rev = 28mV/dec, and switch-off < 0.2V. The optimum ALD process leads single monolayer SiO x for IL (interfacial layer) and low gate leakage current. The FE-HZO FETs is operated at room temperature and 150K to obtain beyond the physical limitation of Boltzmann tyranny, and the extracted body factors are m = 0.67 and m = 0.89 for Vds = 0.1 and 0.5 V, respectively, to confirm the negative capacitance (NC) effect. There are two proposed strategies to reach hysteresis-free, including FE-HZO/epi-Ge/Si FETs with experimentally VT shift 3mV in hysteresis window, and 3nm-thick FE-HZO resulting hysteresis-free and sub-0.2V switching by numerical simulation.

Original languageEnglish
Title of host publication2015 IEEE International Electron Devices Meeting, IEDM 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22.5.1-22.5.4
ISBN (Electronic)9781467398930
DOIs
Publication statusPublished - 2015 Feb 16
Event61st IEEE International Electron Devices Meeting, IEDM 2015 - Washington, United States
Duration: 2015 Dec 72015 Dec 9

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
Volume2016-February
ISSN (Print)0163-1918

Other

Other61st IEEE International Electron Devices Meeting, IEDM 2015
CountryUnited States
CityWashington
Period15/12/715/12/9

Fingerprint

Field effect transistors
Ferroelectric materials
Hysteresis
Capacitance
field effect transistors
switches
capacitance
hysteresis
Switches
shift
Threshold voltage
Leakage currents
threshold voltage
Monolayers
leakage
Computer simulation
room temperature
simulation
Temperature

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Lee, M-H., Chen, P. G., Liu, C., Chu, K. Y., Cheng, C. C., Xie, M. J., ... Chen, M. C. (2015). Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies In 2015 IEEE International Electron Devices Meeting, IEDM 2015 (pp. 22.5.1-22.5.4). [7409759] (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.2015.7409759

Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies . / Lee, Min-Hung; Chen, P. G.; Liu, C.; Chu, K. Y.; Cheng, C. C.; Xie, M. J.; Liu, S. N.; Lee, J. W.; Huang, S. J.; Liao, M. H.; Tang, M.; Li, K. S.; Chen, M. C.

2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. p. 22.5.1-22.5.4 7409759 (Technical Digest - International Electron Devices Meeting, IEDM; Vol. 2016-February).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lee, M-H, Chen, PG, Liu, C, Chu, KY, Cheng, CC, Xie, MJ, Liu, SN, Lee, JW, Huang, SJ, Liao, MH, Tang, M, Li, KS & Chen, MC 2015, Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies in 2015 IEEE International Electron Devices Meeting, IEDM 2015., 7409759, Technical Digest - International Electron Devices Meeting, IEDM, vol. 2016-February, Institute of Electrical and Electronics Engineers Inc., pp. 22.5.1-22.5.4, 61st IEEE International Electron Devices Meeting, IEDM 2015, Washington, United States, 15/12/7. https://doi.org/10.1109/IEDM.2015.7409759
Lee M-H, Chen PG, Liu C, Chu KY, Cheng CC, Xie MJ et al. Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies In 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc. 2015. p. 22.5.1-22.5.4. 7409759. (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2015.7409759
Lee, Min-Hung ; Chen, P. G. ; Liu, C. ; Chu, K. Y. ; Cheng, C. C. ; Xie, M. J. ; Liu, S. N. ; Lee, J. W. ; Huang, S. J. ; Liao, M. H. ; Tang, M. ; Li, K. S. ; Chen, M. C. / Prospects for ferroelectric HfZrOx FETs with experimentally CET=0.98nm, SS for =42mV/dec, SS rev =28mV/dec, switch-off <0.2V, and hysteresis-free strategies 2015 IEEE International Electron Devices Meeting, IEDM 2015. Institute of Electrical and Electronics Engineers Inc., 2015. pp. 22.5.1-22.5.4 (Technical Digest - International Electron Devices Meeting, IEDM).
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abstract = "Ferroelectric HfZrOx (FE-HZO) FETs is experimentally demonstrated with 0.98nm CET (capacitance equivalent thickness), small hysteresis window V T (threshold voltage) shift < 0.1V, SS for = 42mV/dec, SS rev = 28mV/dec, and switch-off < 0.2V. The optimum ALD process leads single monolayer SiO x for IL (interfacial layer) and low gate leakage current. The FE-HZO FETs is operated at room temperature and 150K to obtain beyond the physical limitation of Boltzmann tyranny, and the extracted body factors are m = 0.67 and m = 0.89 for Vds = 0.1 and 0.5 V, respectively, to confirm the negative capacitance (NC) effect. There are two proposed strategies to reach hysteresis-free, including FE-HZO/epi-Ge/Si FETs with experimentally VT shift 3mV in hysteresis window, and 3nm-thick FE-HZO resulting hysteresis-free and sub-0.2V switching by numerical simulation.",
author = "Min-Hung Lee and Chen, {P. G.} and C. Liu and Chu, {K. Y.} and Cheng, {C. C.} and Xie, {M. J.} and Liu, {S. N.} and Lee, {J. W.} and Huang, {S. J.} and Liao, {M. H.} and M. Tang and Li, {K. S.} and Chen, {M. C.}",
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