Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

Cheng Rong Chen; Shu Fen Hu; Po Ching Chen; Huey Liang Hwang; Liang Choo Hsia

doi:10.1116/1.590262

Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

Cheng Rong Chen^*, Shu Fen Hu, Po Ching Chen, Huey Liang Hwang, Liang Choo Hsia

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We have successfully grown ultrathin oxides on large area of sillicon wafers by the microwave plasma afterglow oxidation method. Analysis of the Fourier transform infrared spectra indicates that the general bonding strucures of the ultrathin oxides grown by microwave plasma afterglow oxidation at 700 °C could be identical to those grown by dry O₂ thermal oxidation. Electrical property measurements (e.g., time-zero dielectric breakdown and time-dependent dielectric breakdown) are also investigated. Based on our results, we conclude that microwave plasma aferglow oxidation is a useful method for the perparation of large area ultrathin oxide films on silicon substrates.

Original language	English
Pages (from-to)	2712-2719
Number of pages	8
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	16
Issue number	5
DOIs	https://doi.org/10.1116/1.590262
Publication status	Published - 1998
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Electrical and Electronic Engineering

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Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation. / Chen, Cheng Rong; Hu, Shu Fen; Chen, Po Ching et al.
In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 5, 1998, p. 2712-2719.

Research output: Contribution to journal › Article › peer-review

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AU - Hsia, Liang Choo

PY - 1998

Y1 - 1998

N2 - We have successfully grown ultrathin oxides on large area of sillicon wafers by the microwave plasma afterglow oxidation method. Analysis of the Fourier transform infrared spectra indicates that the general bonding strucures of the ultrathin oxides grown by microwave plasma afterglow oxidation at 700 °C could be identical to those grown by dry O2 thermal oxidation. Electrical property measurements (e.g., time-zero dielectric breakdown and time-dependent dielectric breakdown) are also investigated. Based on our results, we conclude that microwave plasma aferglow oxidation is a useful method for the perparation of large area ultrathin oxide films on silicon substrates.

AB - We have successfully grown ultrathin oxides on large area of sillicon wafers by the microwave plasma afterglow oxidation method. Analysis of the Fourier transform infrared spectra indicates that the general bonding strucures of the ultrathin oxides grown by microwave plasma afterglow oxidation at 700 °C could be identical to those grown by dry O2 thermal oxidation. Electrical property measurements (e.g., time-zero dielectric breakdown and time-dependent dielectric breakdown) are also investigated. Based on our results, we conclude that microwave plasma aferglow oxidation is a useful method for the perparation of large area ultrathin oxide films on silicon substrates.

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Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

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