Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation

Cheng Rong Chen, Shu Fen Hu, Po Ching Chen, Huey Liang Hwang, Liang Choo Hsia

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We have successfully grown ultrathin oxides on large area of sillicon wafers by the microwave plasma afterglow oxidation method. Analysis of the Fourier transform infrared spectra indicates that the general bonding strucures of the ultrathin oxides grown by microwave plasma afterglow oxidation at 700 °C could be identical to those grown by dry O2 thermal oxidation. Electrical property measurements (e.g., time-zero dielectric breakdown and time-dependent dielectric breakdown) are also investigated. Based on our results, we conclude that microwave plasma aferglow oxidation is a useful method for the perparation of large area ultrathin oxide films on silicon substrates.

Original languageEnglish
Pages (from-to)2712-2719
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number5
Publication statusPublished - 1998 Sep 1

Fingerprint

afterglows
Silicon wafers
Microwaves
wafers
Plasmas
microwaves
Oxidation
oxidation
Oxides
oxides
silicon
Electric breakdown
breakdown
Ultrathin films
Time measurement
Oxide films
oxide films
Fourier transforms
Electric properties
infrared spectra

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Properties and reliability of ultrathin oxides grown on four inch diameter silicon wafers by microwave plasma afterglow oxidation. / Chen, Cheng Rong; Hu, Shu Fen; Chen, Po Ching; Hwang, Huey Liang; Hsia, Liang Choo.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 16, No. 5, 01.09.1998, p. 2712-2719.

Research output: Contribution to journalArticle

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