Promising a-Si:H TFTs with high mechanical reliability for flexible display

M. H. Lee, K. Y. Ho, P. C. Chen, C. C. Cheng, S. T. Chang, M. Tang, M. H. Liao, Y. H. Yeh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The high mechanical reliability of a-Si:H TFTs have been fabricated on plastic substrate for flexible display applications. The promising TFT backplane has been successfully applied for AMLCD on colorless polyimide (PI) substrate. The tri-layer of Ti/Al/Ti with 10 μm width are used as scan lines and data lines to replace Cr for stress compensation, and can sustain mechanical bending cycles. The TFTs at 200°C on PI substrate have superior stability with external strain and bending cycles. The redistribution of trap states is analyzed by modeling simulation. The promising a-Si:H TFTs on PI substrate after bending cycles still have superior operation and electrical stress stability and make it possible for AMOLED applications. The Si-based TFTs with high mechanical reliability are highly potential candidate for flexible active-matrix display beyond FPD (flat panel display) generation.

Original languageEnglish
Title of host publication2006 International Electron Devices Meeting Technical Digest, IEDM
DOIs
Publication statusPublished - 2006
Event2006 International Electron Devices Meeting, IEDM - San Francisco, CA, United States
Duration: 2006 Dec 102006 Dec 13

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other2006 International Electron Devices Meeting, IEDM
Country/TerritoryUnited States
CitySan Francisco, CA
Period2006/12/102006/12/13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint

Dive into the research topics of 'Promising a-Si:H TFTs with high mechanical reliability for flexible display'. Together they form a unique fingerprint.

Cite this