@inproceedings{cf876cb2bbd540b8b75a2f40dea5708d,
title = "Program/erase speed and data retention trade-off in negative capacitance versatile memory",
abstract = "In this work, we investigated the performance tradeoff between program/erase speed and data retention of ferroelectric HfZrO memory. The monoclinic HfNO layer with a trapping mechanism was employed to improve the data retention. Under the thickness optimization of HfNO, the HfZrO/HfNO gate stack can be functionalized with volatile and non-volatile operation.",
author = "Fan, \{Chia Chi\} and Chiu, \{Yu Chien\} and Chien Liu and Liou, \{Guan Lin\} and Lai, \{Wen Wei\} and Chen, \{Yi Ru\} and Chang, \{Tun Jen\} and Chen, \{Wan Hsin\} and Cheng, \{Chun Hu\} and Chang, \{Chun Yen\}",
note = "Publisher Copyright: {\textcopyright} 2017 JSAP.; 22nd Silicon Nanoelectronics Workshop, SNW 2017 ; Conference date: 04-06-2017 Through 05-06-2017",
year = "2017",
month = dec,
day = "29",
doi = "10.23919/SNW.2017.8242317",
language = "English",
series = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "101--102",
booktitle = "2017 Silicon Nanoelectronics Workshop, SNW 2017",
}