Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

T. S. Lay; K. H. Huang; W. H. Hung; M. Hong; J. Kwo; J. P. Mannaerts

doi:10.1016/S0038-1101(01)00049-1

Probing the microscopic compositions at Ga₂O₃(Gd₂O₃)/GaAs interface by core level photoelectron spectroscopy

T. S. Lay^*
, K. H. Huang
, W. H. Hung
, M. Hong
, J. Kwo
, J. P. Mannaerts

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The depth profile of high resolution photoelectron spectra at Ga₂O₃(Gd₂O₃)/GaAs and Ga₂O₃/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar⁺ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga₂O₃(Gd₂O₃)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga³⁺ oxidation state and leads to the excellent electrical insulating property of the Ga₂O₃(Gd₂O₃) film.

Original language	English
Pages (from-to)	423-426
Number of pages	4
Journal	Solid-State Electronics
Volume	45
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(01)00049-1
Publication status	Published - 2001 Mar
Externally published	Yes

Keywords

Depth profile
GaAs passivation
GaO(GdO)
Photoelectron spectroscopy

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Materials Chemistry
Electrical and Electronic Engineering

Access to Document

10.1016/S0038-1101(01)00049-1

Cite this

@article{c77e61d94e4c421e844ea91acbb6e6a6,

title = "Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy",

abstract = "The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.",

keywords = "Depth profile, GaAs passivation, GaO(GdO), Photoelectron spectroscopy",

author = "Lay, \{T. S.\} and Huang, \{K. H.\} and Hung, \{W. H.\} and M. Hong and J. Kwo and Mannaerts, \{J. P.\}",

note = "Funding Information: TSL would like to thank the support from the National Science Council of Taiwan through funding grants NSC-89-2218-E-110-023 and the Synchrotron Radiation Research Center, Hsinchu, Taiwan. ",

year = "2001",

month = mar,

doi = "10.1016/S0038-1101(01)00049-1",

language = "English",

volume = "45",

pages = "423--426",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

number = "3",

}

TY - JOUR

T1 - Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

AU - Lay, T. S.

AU - Huang, K. H.

AU - Hung, W. H.

AU - Hong, M.

AU - Kwo, J.

AU - Mannaerts, J. P.

N1 - Funding Information: TSL would like to thank the support from the National Science Council of Taiwan through funding grants NSC-89-2218-E-110-023 and the Synchrotron Radiation Research Center, Hsinchu, Taiwan.

PY - 2001/3

Y1 - 2001/3

N2 - The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.

AB - The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.

KW - Depth profile

KW - GaAs passivation

KW - GaO(GdO)

KW - Photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/0035275930

UR - https://www.scopus.com/pages/publications/0035275930#tab=citedBy

U2 - 10.1016/S0038-1101(01)00049-1

DO - 10.1016/S0038-1101(01)00049-1

M3 - Article

AN - SCOPUS:0035275930

SN - 0038-1101

VL - 45

SP - 423

EP - 426

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -