Probing the microscopic compositions at Ga2O3(Gd2O3)/GaAs interface by core level photoelectron spectroscopy

T. S. Lay, K. H. Huang, W. H. Hung, M. Hong, J. Kwo, J. P. Mannaerts

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The depth profile of high resolution photoelectron spectra at Ga2O3(Gd2O3)/GaAs and Ga2O3/GaAs interfaces have been obtained by using synchrotron radiation beam and low energy Ar+ sputtering. Only one intermediary Ga oxidation state at binding energy ∼20.3 eV has been observed in the Ga2O3(Gd2O3)/GaAs sample. The data suggest that the presence of Gd stabilizes the Ga3+ oxidation state and leads to the excellent electrical insulating property of the Ga2O3(Gd2O3) film.

Original languageEnglish
Pages (from-to)423-426
Number of pages4
JournalSolid-State Electronics
Volume45
Issue number3
DOIs
Publication statusPublished - 2001 Mar 1

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Keywords

  • Depth profile
  • GaAs passivation
  • GaO(GdO)
  • Photoelectron spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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