Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy

T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, Wei-Hsiu Hung, J. S. Wang, J. Y. Chi, D. K. Shih, H. H. Lin

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.

Original languageEnglish
Pages (from-to)1491-1494
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume22
Issue number3
Publication statusPublished - 2004 May 1

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Photoelectron spectroscopy
Nitrides
x ray spectroscopy
Electronic structure
nitrides
photoelectron spectroscopy
Semiconductor materials
electronic structure
X rays
Core levels
Photoelectrons
Binding energy
Molecular beam epitaxy
photoelectrons
molecular beam epitaxy
binding energy

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy. / Lay, T. S.; Kuo, W. T.; Chen, L. P.; Lai, Y. H.; Hung, Wei-Hsiu; Wang, J. S.; Chi, J. Y.; Shih, D. K.; Lin, H. H.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 22, No. 3, 01.05.2004, p. 1491-1494.

Research output: Contribution to journalArticle

Lay, T. S. ; Kuo, W. T. ; Chen, L. P. ; Lai, Y. H. ; Hung, Wei-Hsiu ; Wang, J. S. ; Chi, J. Y. ; Shih, D. K. ; Lin, H. H. / Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy. In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 2004 ; Vol. 22, No. 3. pp. 1491-1494.
@article{a95b13c470a145969e52ac09153a157b,
title = "Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy",
abstract = "An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.",
author = "Lay, {T. S.} and Kuo, {W. T.} and Chen, {L. P.} and Lai, {Y. H.} and Wei-Hsiu Hung and Wang, {J. S.} and Chi, {J. Y.} and Shih, {D. K.} and Lin, {H. H.}",
year = "2004",
month = "5",
day = "1",
language = "English",
volume = "22",
pages = "1491--1494",
journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",
issn = "1071-1023",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy

AU - Lay, T. S.

AU - Kuo, W. T.

AU - Chen, L. P.

AU - Lai, Y. H.

AU - Hung, Wei-Hsiu

AU - Wang, J. S.

AU - Chi, J. Y.

AU - Shih, D. K.

AU - Lin, H. H.

PY - 2004/5/1

Y1 - 2004/5/1

N2 - An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.

AB - An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.

UR - http://www.scopus.com/inward/record.url?scp=3242688049&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3242688049&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:3242688049

VL - 22

SP - 1491

EP - 1494

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 3

ER -