An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2004 May 1|
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering