Probing the electronic structures of III-V-nitride semiconductors by x-ray photoelectron spectroscopy

T. S. Lay, W. T. Kuo, L. P. Chen, Y. H. Lai, Wei-Hsiu Hung, J. S. Wang, J. Y. Chi, D. K. Shih, H. H. Lin

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An investigation of the electronic structures of III-V nitride semiconductors, including InGaAsN, GaAsN, and InAsN compounds, grown using molecular beam epitaxy was presented. From the N(1s) core-level photoelectron spectra, a single peak with a binding energy (Eb)∼398.0eV of N-Ga bonding for GaAsN sample was observed. For the InAsN samples, a single N91s0 peak at Eb∼397.0eV of N-In bonding was also observed. The study showed that the integrated N(1s) intensity of N-In bonding has a higher value than that of N-Ga bonding, in spite of the lower mole fraction of In for the InGaAsN sample.

Original languageEnglish
Pages (from-to)1491-1494
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
Publication statusPublished - 2004 May 1


ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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