Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang; Jing Zong Jhang; Shea Jue Wang; Hsin Chia Yang; Wen Shiang Liao; Ming Feng Lu; Guo Wei Wu; Chuan Hsi Liu

doi:10.1109/ISNE.2013.6512371

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang, Jing Zong Jhang, Shea Jue Wang^*, Hsin Chia Yang, Wen Shiang Liao, Ming Feng Lu, Guo Wei Wu, Chuan Hsi Liu

^*Corresponding author for this work

Department of Mechatronic Engineering

Research output: Contribution to conference › Paper › peer-review

1 Citation (Scopus)

Abstract

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

Original language	English
Pages	375-378
Number of pages	4
DOIs	https://doi.org/10.1109/ISNE.2013.6512371
Publication status	Published - 2013
Event	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan Duration: 2013 Feb 25 → 2013 Feb 26

Other

Other	2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
Country/Territory	Taiwan
City	Kaohsiung
Period	2013/02/25 → 2013/02/26

Keywords

CESL
Si-capping layer
biaxial strain
body effect

ASJC Scopus subject areas

Electrical and Electronic Engineering

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10.1109/ISNE.2013.6512371

Cite this

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title = "Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect",

abstract = "Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.",

keywords = "CESL, Si-capping layer, biaxial strain, body effect",

author = "Wang, {Mu Chun} and Jhang, {Jing Zong} and Wang, {Shea Jue} and Yang, {Hsin Chia} and Liao, {Wen Shiang} and Lu, {Ming Feng} and Wu, {Guo Wei} and Liu, {Chuan Hsi}",

year = "2013",

doi = "10.1109/ISNE.2013.6512371",

language = "English",

pages = "375--378",

note = "2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 ; Conference date: 25-02-2013 Through 26-02-2013",

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TY - CONF

T1 - Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

AU - Wang, Mu Chun

AU - Jhang, Jing Zong

AU - Wang, Shea Jue

AU - Yang, Hsin Chia

AU - Liao, Wen Shiang

AU - Lu, Ming Feng

AU - Wu, Guo Wei

AU - Liu, Chuan Hsi

PY - 2013

Y1 - 2013

N2 - Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

AB - Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

KW - CESL

KW - Si-capping layer

KW - biaxial strain

KW - body effect

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DO - 10.1109/ISNE.2013.6512371

M3 - Paper

AN - SCOPUS:84877982440

SP - 375

EP - 378

T2 - 2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013

Y2 - 25 February 2013 through 26 February 2013

ER -

Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Abstract

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Keywords

ASJC Scopus subject areas

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