Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect

Mu Chun Wang, Jing Zong Jhang, Shea Jue Wang, Hsin Chia Yang, Wen Shiang Liao, Ming Feng Lu, Guo Wei Wu, Chuan Hsi Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Using body effect to probe the inversion charge distribution is a feasible method in qualitative analysis, especially for sandwich embedded SiGe structure in nano-node semiconductor strained engineering. In this study, there were three tested (100) wafers with non-strained, compressive strained and tensile strained types. After analysis, no matter what the compressive or the tensile was, the inversion current flow for PMOSFETs mainly located in biaxial strained SiGe channel due to N-well bias. The related electrical characterizations with well biases were also exhibited.

Original languageEnglish
Title of host publicationISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013
Pages375-378
Number of pages4
DOIs
Publication statusPublished - 2013 May 27
Event2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013 - Kaohsiung, Taiwan
Duration: 2013 Feb 252013 Feb 26

Other

Other2013 IEEE International Symposium on Next-Generation Electronics, ISNE 2013
CountryTaiwan
CityKaohsiung
Period13/2/2513/2/26

Keywords

  • biaxial strain
  • body effect
  • CESL
  • Si-capping layer

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Wang, M. C., Jhang, J. Z., Wang, S. J., Yang, H. C., Liao, W. S., Lu, M. F., Wu, G. W., & Liu, C. H. (2013). Probing moving charge distribution of biaxial and CESL strained PMOSFETs with body effect. In ISNE 2013 - IEEE International Symposium on Next-Generation Electronics 2013 (pp. 375-378). [6512371] https://doi.org/10.1109/ISNE.2013.6512371