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Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy
F. M. Hsiao, M. Schnedler, V. Portz, Y. C. Huang, B. C. Huang, M. C. Shih, C. W. Chang, L. W. Tu, H. Eisele, R. E. Dunin-Borkowski, Ph Ebert, Y. P. Chiu
Research output: Contribution to journal › Article › peer-review
5
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(Scopus)