Abstract
Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.
Original language | English |
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Pages (from-to) | 7809-7815 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 27 |
Issue number | 47 |
DOIs | |
Publication status | Published - 2015 Dec 16 |
Keywords
- band gap opening
- charge transfer
- graphene heterostructures
- ultrastrong photoinduced doping
ASJC Scopus subject areas
- General Materials Science
- Mechanics of Materials
- Mechanical Engineering