Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer

Po Hsun Ho, Chun Hsiang Chen, Fu Yu Shih, Yih Ren Chang, Shao Sian Li, Wei Hua Wang, Min Chuan Shih, Wei Ting Chen, Ya Ping Chiu*, Min Ken Li, Yi Siang Shih, Chun Wei Chen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

Ultrastrong and precisely controllable n-type photoinduced doping at a graphene/TiOx heterostructure as a result of trap-state-mediated charge transfer is demonstrated, which is much higher than any other reported photodoping techniques. Based on the strong light-matter interactions at the graphene/TiOx heterostructure, precisely controlled photoinduced bandgap opening of a bilayer graphene device is demonstrated.

Original languageEnglish
Pages (from-to)7809-7815
Number of pages7
JournalAdvanced Materials
Volume27
Issue number47
DOIs
Publication statusPublished - 2015 Dec 16

Keywords

  • band gap opening
  • charge transfer
  • graphene heterostructures
  • ultrastrong photoinduced doping

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer'. Together they form a unique fingerprint.

Cite this