Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao; Ming Che Ku; Wu Wei Tsai; Hsiao Wen Zan; Hsin Fei Meng; Hung Kuo Tsai; Sheng Fu Horng

doi:10.1063/1.3513334

Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Yu Chiang Chao
, Ming Che Ku
, Wu Wei Tsai
, Hsiao Wen Zan^*
, Hsin Fei Meng
, Hung Kuo Tsai
, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 10⁵ at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm² with current gain greater than 1000.

Original language	English
Article number	223307
Journal	Applied Physics Letters
Volume	97
Issue number	22
DOIs	https://doi.org/10.1063/1.3513334
Publication status	Published - 2010 Nov 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3513334

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title = "Polymer space-charge-limited transistor as a solid-state vacuum tube triode",

abstract = "We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.",

author = "Chao, \{Yu Chiang\} and Ku, \{Ming Che\} and Tsai, \{Wu Wei\} and Zan, \{Hsiao Wen\} and Meng, \{Hsin Fei\} and Tsai, \{Hung Kuo\} and Horng, \{Sheng Fu\}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.",

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doi = "10.1063/1.3513334",

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AU - Chao, Yu Chiang

AU - Ku, Ming Che

AU - Tsai, Wu Wei

AU - Zan, Hsiao Wen

AU - Meng, Hsin Fei

AU - Tsai, Hung Kuo

AU - Horng, Sheng Fu

N1 - Funding Information: This work was supported by the National Science Council of Taiwan under Contract No. NSC98-2628-M-009-001.

PY - 2010/11/29

Y1 - 2010/11/29

N2 - We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.

AB - We report the construction of a polymer space-charge-limited transistor (SCLT), a solid-state version of vacuum tube triode. The SCLT achieves a high on/off ratio of 3× 105 at a low operation voltage of 1.5 V by using high quality insulators both above and below the grid base electrode. Applying a greater bias to the base increases the barrier potential, and turns off the channel current, without introducing a large parasitic leakage current. Simulation result verifies the influence of base bias on channel potential distribution. The output current density is 1.7 mA/ cm2 with current gain greater than 1000.

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JO - Applied Physics Letters

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Polymer space-charge-limited transistor as a solid-state vacuum tube triode

Abstract

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