Polymer space-charge-limited transistor

Yu Chiang Chao; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.2207838

Polymer space-charge-limited transistor

Yu Chiang Chao, Hsin Fei Meng^*, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

52 Citations (Scopus)

Abstract

A metal grid is sandwiched between poly(3-hexylthiophene) to form a solid-state version of vacuum tube triode, where the vertical space-charge-limited current is modulated by the grid potential. The Al grid contains random submicron openings formed by a nonlithographic method. The multilayer polymer structure is made by spin coating. The operating voltage of the polymer space-charge-limited transistor is 3 V, and the current gain of 506 is obtained. The characteristics of the transistor can be tuned by the diameters and the density of the openings on the grid. Similar to the vacuum tube triode, the current follows a power law voltage dependence.

Original language	English
Article number	223510
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2207838
Publication status	Published - 2006 May 29
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2207838

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abstract = "A metal grid is sandwiched between poly(3-hexylthiophene) to form a solid-state version of vacuum tube triode, where the vertical space-charge-limited current is modulated by the grid potential. The Al grid contains random submicron openings formed by a nonlithographic method. The multilayer polymer structure is made by spin coating. The operating voltage of the polymer space-charge-limited transistor is 3 V, and the current gain of 506 is obtained. The characteristics of the transistor can be tuned by the diameters and the density of the openings on the grid. Similar to the vacuum tube triode, the current follows a power law voltage dependence.",

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PY - 2006/5/29

Y1 - 2006/5/29

N2 - A metal grid is sandwiched between poly(3-hexylthiophene) to form a solid-state version of vacuum tube triode, where the vertical space-charge-limited current is modulated by the grid potential. The Al grid contains random submicron openings formed by a nonlithographic method. The multilayer polymer structure is made by spin coating. The operating voltage of the polymer space-charge-limited transistor is 3 V, and the current gain of 506 is obtained. The characteristics of the transistor can be tuned by the diameters and the density of the openings on the grid. Similar to the vacuum tube triode, the current follows a power law voltage dependence.

AB - A metal grid is sandwiched between poly(3-hexylthiophene) to form a solid-state version of vacuum tube triode, where the vertical space-charge-limited current is modulated by the grid potential. The Al grid contains random submicron openings formed by a nonlithographic method. The multilayer polymer structure is made by spin coating. The operating voltage of the polymer space-charge-limited transistor is 3 V, and the current gain of 506 is obtained. The characteristics of the transistor can be tuned by the diameters and the density of the openings on the grid. Similar to the vacuum tube triode, the current follows a power law voltage dependence.

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Polymer space-charge-limited transistor

Abstract

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