Polymer nanowire vertical transistors

Husande Li; Tzushan Chen; Yuchiang Chao

doi:10.1007/s12274-014-0458-3

Polymer nanowire vertical transistors

Husande Li, Tzushan Chen, Yuchiang Chao^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]

Original language	English
Pages (from-to)	938-944
Number of pages	7
Journal	Nano Research
Volume	7
Issue number	6
DOIs	https://doi.org/10.1007/s12274-014-0458-3
Publication status	Published - 2014 Jun
Externally published	Yes

Keywords

colloidal lithography
polymer nanowires
polystyrene spheres
vertical transistors

ASJC Scopus subject areas

General Materials Science
Electrical and Electronic Engineering

Access to Document

10.1007/s12274-014-0458-3

Cite this

@article{d9a348afe82a4441899c342e4e4d9368,

title = "Polymer nanowire vertical transistors",

abstract = "By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]",

keywords = "colloidal lithography, polymer nanowires, polystyrene spheres, vertical transistors",

author = "Husande Li and Tzushan Chen and Yuchiang Chao",

note = "Funding Information: This work was supported by the Science Council under grant number NSC100-2112-M-033-008-MY3.",

year = "2014",

month = jun,

doi = "10.1007/s12274-014-0458-3",

language = "English",

volume = "7",

pages = "938--944",

journal = "Nano Research",

issn = "1998-0124",

publisher = "Press of Tsinghua University",

number = "6",

}

TY - JOUR

T1 - Polymer nanowire vertical transistors

AU - Li, Husande

AU - Chen, Tzushan

AU - Chao, Yuchiang

N1 - Funding Information: This work was supported by the Science Council under grant number NSC100-2112-M-033-008-MY3.

PY - 2014/6

Y1 - 2014/6

N2 - By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]

AB - By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]

KW - colloidal lithography

KW - polymer nanowires

KW - polystyrene spheres

KW - vertical transistors

UR - http://www.scopus.com/inward/record.url?scp=84902329985&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84902329985&partnerID=8YFLogxK

U2 - 10.1007/s12274-014-0458-3

DO - 10.1007/s12274-014-0458-3

M3 - Article

AN - SCOPUS:84902329985

SN - 1998-0124

VL - 7

SP - 938

EP - 944

JO - Nano Research

JF - Nano Research

IS - 6

ER -

Polymer nanowire vertical transistors

Abstract

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this