Polymer nanowire vertical transistors

Husande Li, Tzushan Chen, Yuchiang Chao

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

By utilizing poly(3-hexylthiophene) (P3HT) polymer nanowires with diameters of ∼15 nm as the vertical channel material, a polymer nanowire vertical transistor has been demonstrated for the first time. The P3HT nanowires were characterized by absorption spectroscopy and scanning electron microscopy. A saturated output current was created by increasing the thickness of the polymer layers between the electrodes through several spin-coating cycles of the polymer nanowires prepared in a marginal solvent. The carrier mobility was also increased through utilization of polymer nanowires with strong interchain interactions. By introducing a small hole injection barrier between the emitter and semiconducting polymer, an on/off current ratio of 1,500 was obtained. The operating voltage is less than 2 V. [Figure not available: see fulltext.]

Original languageEnglish
Pages (from-to)938-944
Number of pages7
JournalNano Research
Volume7
Issue number6
DOIs
Publication statusPublished - 2014 Jun
Externally publishedYes

Keywords

  • colloidal lithography
  • polymer nanowires
  • polystyrene spheres
  • vertical transistors

ASJC Scopus subject areas

  • Materials Science(all)
  • Electrical and Electronic Engineering

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