Polymer hot-carrier transistor with low bandgap emitter

Yu Chiang Chao; Ming Hong Xie; Ming Zhi Dai; Hsin Fei Meng; Sheng Fu Horng; Chain Shu Hsu

doi:10.1063/1.2839395

Polymer hot-carrier transistor with low bandgap emitter

Yu Chiang Chao, Ming Hong Xie, Ming Zhi Dai, Hsin Fei Meng^*, Sheng Fu Horng, Chain Shu Hsu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as 31 mA cm2 is achieved when collector voltage is -10 V. For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to 428 mA cm2. The brightness of 3000 cd m2 is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at 100 kHz.

Original language	English
Article number	093310
Journal	Applied Physics Letters
Volume	92
Issue number	9
DOIs	https://doi.org/10.1063/1.2839395
Publication status	Published - 2008
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2839395

Cite this

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title = "Polymer hot-carrier transistor with low bandgap emitter",

abstract = "Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as 31 mA cm2 is achieved when collector voltage is -10 V. For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to 428 mA cm2. The brightness of 3000 cd m2 is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at 100 kHz.",

author = "Chao, {Yu Chiang} and Xie, {Ming Hong} and Dai, {Ming Zhi} and Meng, {Hsin Fei} and Horng, {Sheng Fu} and Hsu, {Chain Shu}",

note = "Funding Information: This work was supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.",

year = "2008",

doi = "10.1063/1.2839395",

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journal = "Applied Physics Letters",

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AU - Chao, Yu Chiang

AU - Xie, Ming Hong

AU - Dai, Ming Zhi

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

AU - Hsu, Chain Shu

N1 - Funding Information: This work was supported by the National Science Council of the Republic of China under Contract No. NSC96-2112-M-009-036.

PY - 2008

Y1 - 2008

N2 - Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as 31 mA cm2 is achieved when collector voltage is -10 V. For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to 428 mA cm2. The brightness of 3000 cd m2 is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at 100 kHz.

AB - Vertical polymer hot-carrier transistor using the low bandgap material poly(3-hexylthiophene) as both the emitter and the collector are studied. The common emitter current gain is shown to depend on the LiF thickness and the emitter thickness, with maximal value at 31. Current density as high as 31 mA cm2 is achieved when collector voltage is -10 V. For the device using blend of poly(3-hexylthiophene) and high bandgap polymer poly(9-vinylcarbazole) as the emitter, the current density rises sharply to 428 mA cm2. The brightness of 3000 cd m2 is obtained as a polymer light-emitting diode is driven by the transistor with the same area. The transistor can be operated at 100 kHz.

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Polymer hot-carrier transistor with low bandgap emitter

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