Polymer hot-carrier transistor

Yu Chiang Chao; Syuan Ling Yang; Hsin Fei Meng; Sheng Fu Horng

doi:10.1063/1.2149219

Polymer hot-carrier transistor

Yu Chiang Chao
, Syuan Ling Yang
, Hsin Fei Meng^*
, Sheng Fu Horng

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

Original language	English
Article number	253508
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	25
DOIs	https://doi.org/10.1063/1.2149219
Publication status	Published - 2005
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2149219

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title = "Polymer hot-carrier transistor",

abstract = "Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.",

author = "Chao, \{Yu Chiang\} and Yang, \{Syuan Ling\} and Meng, \{Hsin Fei\} and Horng, \{Sheng Fu\}",

note = "Funding Information: This work is supported by the National Science Council of the Republic of China and the Excellence Project of the ROC Ministry of Education.",

year = "2005",

doi = "10.1063/1.2149219",

language = "English",

volume = "87",

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journal = "Applied Physics Letters",

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publisher = "American Institute of Physics Inc.",

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T1 - Polymer hot-carrier transistor

AU - Chao, Yu Chiang

AU - Yang, Syuan Ling

AU - Meng, Hsin Fei

AU - Horng, Sheng Fu

N1 - Funding Information: This work is supported by the National Science Council of the Republic of China and the Excellence Project of the ROC Ministry of Education.

PY - 2005

Y1 - 2005

N2 - Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

AB - Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

UR - https://www.scopus.com/pages/publications/29144471955

UR - https://www.scopus.com/pages/publications/29144471955#tab=citedBy

U2 - 10.1063/1.2149219

DO - 10.1063/1.2149219

M3 - Article

AN - SCOPUS:29144471955

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SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253508

ER -

Polymer hot-carrier transistor

Abstract

ASJC Scopus subject areas

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