Polymer hot-carrier transistor

Yu Chiang Chao, Syuan Ling Yang, Hsin Fei Meng*, Sheng Fu Horng

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

Original languageEnglish
Article number253508
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number25
Publication statusPublished - 2005
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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