Polymer hot-carrier transistor

Yu Chiang Chao, Syuan Ling Yang, Hsin Fei Meng, Sheng Fu Horng

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Metal-base hot-carrier transistor with conjugated polymer emitter and collector is demonstrated. The device is fabricated by multiple spin coating with the metal base sandwiched between two polymers. A thin insulating layer of LiF is inserted between the emitter and base to enhance the hot carrier kinetic energy and reduce mutual dissolution. Using poly(9-vinylcarbazole) as the emitter, Al as the base, and poly(3-hexylthiophene) as the collector, common-emitter current gain of 25 is obtained with operation voltage as low as 5 V.

Original languageEnglish
Article number253508
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number25
DOIs
Publication statusPublished - 2005 Dec 27

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Chao, Y. C., Yang, S. L., Meng, H. F., & Horng, S. F. (2005). Polymer hot-carrier transistor. Applied Physics Letters, 87(25), 1-3. [253508]. https://doi.org/10.1063/1.2149219