Polymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam

Yann Wen Lan, Wen Hao Chang, Bo Tang Xiao, Bo Wei Liang, Jyun Hong Chen, Pei-hsun Jiang, Lain Jong Li, Ya Wen Su, Yuan Liang Zhong, Chii Dong Chen

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Apolymer-free technique for generating nanopatterns on both synthesized and exfoliated graphene sheets is proposed and demonstrated. A low-energy (5-30 keV) scanning electron beam with variable repetition rates is used to etch suspended and unsuspended graphene sheets on designed locations. The patterning mechanisms involve a defect-induced knockout process in the initial etching stage and a heatinduced curling process in a later stage. Rough pattern edges appear due to inevitable stochastic knockout of carbon atoms or graphene structure imperfection and can be smoothed by thermal annealing. By using this technique, the minimum feature sizes achieved are about 5 nm for suspended and 7 nm for unsuspended graphene. This study demonstrates a polymer-free direct nanopatterning approach for graphene.

Original languageEnglish
Pages (from-to)4778-4784
Number of pages7
JournalSmall
Volume10
Issue number22
DOIs
Publication statusPublished - 2014 Nov 26

ASJC Scopus subject areas

  • Biotechnology
  • Biomaterials
  • Chemistry(all)
  • Materials Science(all)

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    Lan, Y. W., Chang, W. H., Xiao, B. T., Liang, B. W., Chen, J. H., Jiang, P., Li, L. J., Su, Y. W., Zhong, Y. L., & Chen, C. D. (2014). Polymer-free patterning of graphene at sub-10-nm scale by low-energy repetitive electron beam. Small, 10(22), 4778-4784. https://doi.org/10.1002/smll.201401523