TY - JOUR
T1 - Pinning of magnetic moments at the interfacial region of ultrathin CoO/Co bilayers grown on Ge(1 0 0)
AU - Chang, Shin Chen
AU - Tsay, Jyh Shen
AU - Chang, Cheng Hsun Tony
AU - Yao, Yeong Der
N1 - Funding Information:
The authors acknowledge supports from National Science Council of Taiwan under Contract No. NSC-100-2112-M-003-004-MY3 and Ministry of Science and Technology of Taiwan under Contract No. MOST-103-2112-M-003-006 .
Publisher Copyright:
© 2015 Elsevier B.V.
PY - 2015/11/1
Y1 - 2015/11/1
N2 - For CoO overlayers prepared by evaporating Co atoms in an oxygen atmosphere, both the oxidation of the Co atoms at the interface and the segregation of oxygen atoms into the Co surface occur. Parts of Co atoms at the interface become nonferromagnetic and this causes the reduction of Kerr intensity at 300 K. After field cooling treatments, further reduction of the Kerr intensity is detected. The change of the Kerr intensity is an indicator of the pinned magnetic moments. In the case of forming thicker interfacial region, more pinned magnetic moments are observed and result in the larger exchange bias field for CoO on thicker Co/Ge(1 0 0). This tunable pinning provides a practical way of increasing exchange bias field by controlling the thickness of the interfacial region for ultrathin CoO/Co bilayers on semiconductor substrates.
AB - For CoO overlayers prepared by evaporating Co atoms in an oxygen atmosphere, both the oxidation of the Co atoms at the interface and the segregation of oxygen atoms into the Co surface occur. Parts of Co atoms at the interface become nonferromagnetic and this causes the reduction of Kerr intensity at 300 K. After field cooling treatments, further reduction of the Kerr intensity is detected. The change of the Kerr intensity is an indicator of the pinned magnetic moments. In the case of forming thicker interfacial region, more pinned magnetic moments are observed and result in the larger exchange bias field for CoO on thicker Co/Ge(1 0 0). This tunable pinning provides a practical way of increasing exchange bias field by controlling the thickness of the interfacial region for ultrathin CoO/Co bilayers on semiconductor substrates.
KW - Magnetic thin films
KW - Oxide
KW - Tunable exchange bias
KW - Ultrathin films
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U2 - 10.1016/j.apsusc.2015.04.019
DO - 10.1016/j.apsusc.2015.04.019
M3 - Article
AN - SCOPUS:84944274568
SN - 0169-4332
VL - 354
SP - 95
EP - 99
JO - Applied Surface Science
JF - Applied Surface Science
ER -