Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann; S. J. Sheih; C. Chia; K. T. Tsen; O. F. Sankey; Selim E. Guncer; D. K. Ferry; G. Maracas; Ravi Droopad; A. Salvador; A. Botcharev; H. Morkoç

doi:10.1063/1.110848

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann^*, S. J. Sheih, C. Chia, K. T. Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

19 Citations (Scopus)

Abstract

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×10¹⁸ cm^-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V _d=2.5×10⁷ cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original language	English
Pages (from-to)	1230-1232
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	10
DOIs	https://doi.org/10.1063/1.110848
Publication status	Published - 1994
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.110848

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, S. E., Ferry, D. K., Maracas, G., Droopad, R., Salvador, A., Botcharev, A., & Morkoç, H. (1994). Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. Applied Physics Letters, 64(10), 1230-1232. https://doi.org/10.1063/1.110848

Grann, ED, Sheih, SJ, Chia, C, Tsen, KT, Sankey, OF, Guncer, SE, Ferry, DK, Maracas, G, Droopad, R, Salvador, A, Botcharev, A & Morkoç, H 1994, 'Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors', Applied Physics Letters, vol. 64, no. 10, pp. 1230-1232. https://doi.org/10.1063/1.110848

@article{b399b958a5bb4ac4a7b8591fec4c5430,

title = "Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors",

abstract = "Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.",

author = "Grann, {E. D.} and Sheih, {S. J.} and C. Chia and Tsen, {K. T.} and Sankey, {O. F.} and Guncer, {Selim E.} and Ferry, {D. K.} and G. Maracas and Ravi Droopad and A. Salvador and A. Botcharev and H. Morko{\c c}",

year = "1994",

doi = "10.1063/1.110848",

language = "English",

volume = "64",

pages = "1230--1232",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

AU - Grann, E. D.

AU - Sheih, S. J.

AU - Chia, C.

AU - Tsen, K. T.

AU - Sankey, O. F.

AU - Guncer, Selim E.

AU - Ferry, D. K.

AU - Maracas, G.

AU - Droopad, Ravi

AU - Salvador, A.

AU - Botcharev, A.

AU - Morkoç, H.

PY - 1994

Y1 - 1994

N2 - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

AB - Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

UR - http://www.scopus.com/inward/record.url?scp=0000475407&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000475407&partnerID=8YFLogxK

U2 - 10.1063/1.110848

DO - 10.1063/1.110848

M3 - Article

AN - SCOPUS:0000475407

SN - 0003-6951

VL - 64

SP - 1230

EP - 1232

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 10

ER -

Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this