Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors

E. D. Grann, S. J. Sheih, C. Chia, K. T. Tsen, O. F. Sankey, Selim E. Guncer, D. K. Ferry, G. Maracas, Ravi Droopad, A. Salvador, A. Botcharev, H. Morkoç

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Abstract

Electron transport in GaAs-based p-i-n nanostructure semiconductors under the application of an electric field has been studied by transient Raman spectroscopy on a picosecond time scale and at T≅80 K. For an injected carrier density of n≅2.2×1018 cm-3 and electric field intensity E=25 kV/cm, the drift velocity of electrons as high as V d=2.5×107 cm/s was observed. These experimental results are in good agreement with Ensemble Monte Carlo calculations.

Original languageEnglish
Pages (from-to)1230-1232
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number10
DOIs
Publication statusPublished - 1994 Dec 1

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Grann, E. D., Sheih, S. J., Chia, C., Tsen, K. T., Sankey, O. F., Guncer, S. E., Ferry, D. K., Maracas, G., Droopad, R., Salvador, A., Botcharev, A., & Morkoç, H. (1994). Picosecond Raman studies of electric-field-induced nonequilibrium carrier distributions in GaAs-based p-i-n nanostructure semiconductors. Applied Physics Letters, 64(10), 1230-1232. https://doi.org/10.1063/1.110848