Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

M. H. Lee, S. T. Fan, C. H. Tang, P. G. Chen, Y. C. Chou, H. H. Chen, J. Y. Kuo, M. J. Xie, S. N. Liu, M. H. Liao, C. A. Jong, K. S. Li, M. C. Chen, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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