Physical thickness 1.x nm ferroelectric HfZrOx negative capacitance FETs

M. H. Lee, S. T. Fan, C. H. Tang, P. G. Chen, Y. C. Chou, H. H. Chen, J. Y. Kuo, M. J. Xie, S. N. Liu, M. H. Liao, C. A. Jong, K. S. Li, M. C. Chen, C. W. Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

77 Citations (Scopus)

Abstract

Ferroelectric HfZrOx (FE-HZO) negative capacitance (NC) FETs is experimentally demonstrated with physical thickness 1.5 nm, SS = 52 mV/dec, hysteresis free (threshold voltage shift = 0.8 mV), and 0.65 nm CET (capacitance equivalent thickness). The NC-FinFET modeling is validated on standard 14nm FinFET. The transient behavior of gate and drain current response are exhibited with triangular gate voltage sweep. The dynamic NC model with compact equivalent circuit for ultra-thin FE-HZO is established with experimental data validation, and estimates the fast response. A feasible concept of coupling the ultra-thin FE-HZO (1.x nm) with NC as gate stack paves a promising solution for sub-10nm technology node.

Original languageEnglish
Title of host publication2016 IEEE International Electron Devices Meeting, IEDM 2016
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages12.1.1-12.1.4
ISBN (Electronic)9781509039012
DOIs
Publication statusPublished - 2017 Jan 31
Event62nd IEEE International Electron Devices Meeting, IEDM 2016 - San Francisco, United States
Duration: 2016 Dec 32016 Dec 7

Publication series

NameTechnical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)0163-1918

Other

Other62nd IEEE International Electron Devices Meeting, IEDM 2016
Country/TerritoryUnited States
CitySan Francisco
Period2016/12/032016/12/07

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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