Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu; Hau Wei Fang; Jang Hsing Hsieh; Jenh Yih Juang

doi:10.1016/j.materresbull.2012.02.021

Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu^*, Hau Wei Fang, Jang Hsing Hsieh, Jenh Yih Juang

^*Corresponding author for this work

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

Original language	English
Pages (from-to)	1568-1571
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	6
DOIs	https://doi.org/10.1016/j.materresbull.2012.02.021
Publication status	Published - 2012 Jun

Keywords

A. Amorphous materials
A. Semiconductors
B. Sputtering
D. Electrical properties
D. Magnetic properties
D. Optical properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2012.02.021

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@article{6bdb0dcfb6604641959d8affb994eb50,

title = "Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique",

abstract = "Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.",

keywords = "A. Amorphous materials, A. Semiconductors, B. Sputtering, D. Electrical properties, D. Magnetic properties, D. Optical properties",

author = "Liu, {Shiu Jen} and Fang, {Hau Wei} and Hsieh, {Jang Hsing} and Juang, {Jenh Yih}",

note = "Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .",

year = "2012",

month = jun,

doi = "10.1016/j.materresbull.2012.02.021",

language = "English",

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journal = "Materials Research Bulletin",

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T1 - Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

AU - Liu, Shiu Jen

AU - Fang, Hau Wei

AU - Hsieh, Jang Hsing

AU - Juang, Jenh Yih

N1 - Funding Information: This work was supported by the National Science Council of Taiwan , under Grant No. NSC 98-2112-M-003-005-MY3 .

PY - 2012/6

Y1 - 2012/6

N2 - Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

AB - Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

KW - A. Amorphous materials

KW - A. Semiconductors

KW - B. Sputtering

KW - D. Electrical properties

KW - D. Magnetic properties

KW - D. Optical properties

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U2 - 10.1016/j.materresbull.2012.02.021

DO - 10.1016/j.materresbull.2012.02.021

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SN - 0025-5408

VL - 47

SP - 1568

EP - 1571

JO - Materials Research Bulletin

JF - Materials Research Bulletin

IS - 6

ER -

Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Abstract

Keywords

ASJC Scopus subject areas

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