Physical properties of amorphous Mo-doped In-Ga-Zn-O films grown by magnetron co-sputtering technique

Shiu Jen Liu, Hau Wei Fang, Jang Hsing Hsieh, Jenh Yih Juang

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Amorphous thin films of In-Ga-Zn-O (a-IGZO) doped with Mo have been fabricated by using magnetron co-sputtering technique. The Mo concentration in a-IGZO films was modulated by varying the sputtering power applied on the Mo target. The electrical, optical and magnetic properties of Mo-doped a-IGZO films grown on glasses were investigated. The carrier density and mobility of a-IGZO films can be remarkably enhanced by low concentration Mo doping. On the other hand, the optical bandgap of a-IGZO films is not significantly affected by Mo doping. However, the transmission is decreased with increasing the Mo doping. Moreover, all Mo-doped films exhibit room-temperature ferromagnetism.

Original languageEnglish
Pages (from-to)1568-1571
Number of pages4
JournalMaterials Research Bulletin
Volume47
Issue number6
DOIs
Publication statusPublished - 2012 Jun 1

Keywords

  • A. Amorphous materials
  • A. Semiconductors
  • B. Sputtering
  • D. Electrical properties
  • D. Magnetic properties
  • D. Optical properties

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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