Physical properties of amorphous InGaZnO4 films doped with Mn

Shiu Jen Liu*, Hau Wei Fang, Shih Hao Su, Chia Hung Li, Jyh Shiarn Cherng, Jang Hsing Hsieh, Jenh Yih Juang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Amorphous InGaZnO4 (a-IGZO) films doped with various concentrations of Mn have been fabricated by using pulsed-laser deposition technique. Optical, electrical, and magnetic properties of the prepared Mn-doped a-IGZO films were investigated. The resistivity, carrier concentration, and carrier mobility of the a-IGZO films were found to be, respectively, increased, decreased, and enhanced by Mn doping. Moreover, the optical transmission is slightly increased in the visible range and the optical band gaps are not affected in the Mn-doped films. Room-temperature ferromagnetism has been observed in the field-dependent magnetization measurements.

Original languageEnglish
Article number092504
JournalApplied Physics Letters
Issue number9
Publication statusPublished - 2009

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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