Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors

Kadiyam Rajshekar, Hsiao Hsuan Hsu, Koppolu Uma Mahendra Kumar, P. Sathyanarayanan, V. Velmurugan, Chun Hu Cheng, D. Kannadassan*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Fabrication, physical modeling and dynamic response of p -type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high I{ON}/I{OFF} ratio of > 106, low subthreshold swing of 100 mV/dec and high field-effect mobility ( μ {FE}) of 4.8 cm{2}V{-1}s{-1}. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p -type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.

Original languageEnglish
Article number9173540
Pages (from-to)948-958
Number of pages11
JournalIEEE Journal of the Electron Devices Society
Publication statusPublished - 2020


  • Al doped SnO
  • Thin film transistors (TFTs)
  • density of states (DOS)
  • dynamic response
  • plasma fluorination

ASJC Scopus subject areas

  • Biotechnology
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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