TY - JOUR
T1 - Physical Modeling of p-Type Fluorinated Al-Doped Tin-Oxide Thin Film Transistors
AU - Rajshekar, Kadiyam
AU - Hsu, Hsiao Hsuan
AU - Kumar, Koppolu Uma Mahendra
AU - Sathyanarayanan, P.
AU - Velmurugan, V.
AU - Cheng, Chun Hu
AU - Kannadassan, D.
N1 - Funding Information:
This work was supported by the Council of Scientific and Industrial Research (CSIR), Government of India under Grant 09/844(0046)/2018-EMR-I.
PY - 2020
Y1 - 2020
N2 - Fabrication, physical modeling and dynamic response of p -type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high I{ON}/I{OFF} ratio of > 106, low subthreshold swing of 100 mV/dec and high field-effect mobility ( μ {FE}) of 4.8 cm{2}V{-1}s{-1}. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p -type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.
AB - Fabrication, physical modeling and dynamic response of p -type Al-doped SnOx active channel thin film transistors (TFTs) are presented for the potential application of ultra-high definition (UHD) displays. After deposition of Al-doped SnOx active layer using reactive co-sputtering, the channel was treated with plasma fluorination which improve the device performance of high I{ON}/I{OFF} ratio of > 106, low subthreshold swing of 100 mV/dec and high field-effect mobility ( μ {FE}) of 4.8 cm{2}V{-1}s{-1}. To understand the origin of such high performance, physical modeling and numerical simulations were performed using density of state (DOS) model of defects/traps of oxide semiconductor. This model describes the modifications of donor-like tail states and acceptor-like Gaussian defect states due to Al doping on SnOx and fluorine treatment. To evaluate the device performance for UHD large scale displays, the dynamic responses of p -type TFT pixel circuit for various requirements are simulated with physical models. These results suggest that the Al-doped SnOx TFTs are potential candidates for future high-definition displays and many applications in transparent electronics.
KW - Al doped SnO
KW - density of states (DOS)
KW - dynamic response
KW - plasma fluorination
KW - Thin film transistors (TFTs)
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U2 - 10.1109/JEDS.2020.3018463
DO - 10.1109/JEDS.2020.3018463
M3 - Article
AN - SCOPUS:85092155353
VL - 8
SP - 948
EP - 958
JO - IEEE Journal of the Electron Devices Society
JF - IEEE Journal of the Electron Devices Society
SN - 2168-6734
M1 - 9173540
ER -